10×10mm 4H-N Type SiC Substrate: Technical Overview and Applications
High-Performance Semiconductor Solution for Advanced Electronics
1. Product Overview
The 10×10mm 4H-N type silicon carbide (SiC) substrateis a high-performance semiconductor material based on third-generation SiC technology. Manufactured via Physical Vapor Transport (PVT)or High-Temperature Chemical Vapor Deposition (HTCVD), it offers exceptional thermal, electrical, and mechanical properties. With a dimensional tolerance of ±0.05 mmand surface roughness Ra < 0.5 nm, it is ideal for prototyping power devices, RF components, and optoelectronic systems. The substrate is available in 4H-SiCor 6H-SiCpolytypes, with N-type or P-type doping options, and undergoes rigorous quality inspections (e.g., XRD, optical microscopy) to ensure semiconductor-grade reliability.
2. Technical Specifications
Table 1: Key Parameters of 10×10mm 4H-N Type SiC Substrate
| Parameter Category | Specifications |
| Material Type | 4H-SiC, N-type doped |
| Dimensions | 10×10 mm (±0.05 mm tolerance) |
| Thickness Options | 100–500 μm |
| Surface Roughness | Ra < 0.5 nm (polished, epitaxial-ready) |
| Electrical Properties | Resistivity: 0.01–0.1 Ω·cm; Carrier Concentration: 1×10¹⁸–5×10¹⁹ cm⁻³ |
| Crystal Orientation | (0001) ±0.5° (standard) |
| Thermal Conductivity | 490 W/m·K (typical) |
| Defect Density | Micropipe Density: <1 cm⁻²; Dislocation Density: <10⁴ cm⁻² |
| Customization | Non-standard shapes, doping profiles, backside metallization |
3. Key Advantages of SiC Substrates
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Superior Thermal Management: With a thermal conductivity of 490 W/m·K(3× higher than silicon), the substrate enables efficient heat dissipation, reducing device operating temperatures and enhancing system longevity.
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High Voltage Tolerance: A breakdown field strength of 2–4 MV/cm(10× higher than silicon) supports high-power applications, while a high electron saturation drift velocity (2×10⁷ cm/s) benefits high-frequency designs.
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Mechanical Robustness: Vickers hardness of 28–32 GPaand flexural strength >400 MPaprovide 5–10× longer service life than conventional materials.
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Environmental Stability: Operational temperatures up to 600°Cand a low thermal expansion coefficient (4.0×10⁻⁶/K) ensure performance in extreme conditions.
4. Applications in Advanced Technologies
Table 2: Core Application Areas of 10×10mm SiC Substrates
| Application Field | Use Cases | Benefits |
| Electric Vehicles | Powertrain inverters, SiC MOSFETs/ diodes | 3–5% higher inverter efficiency, extended EV range |
| 5G Infrastructure | RF power amplifiers (mmWave bands: 24–39 GHz) | >20% reduction in base station power consumption |
| Smart Grids | HVDC systems, solid-state transformers | Improved power transmission efficiency |
| Industrial Automation | High-power motor drives (switching frequency >100 kHz) | 50% smaller device size |
| Aerospace & Defense | Satellite power systems, engine controls | Reliability in extreme temperatures/radiation |
| Optoelectronics | UV LEDs, laser diodes | Optimal substrate due to wide bandgap and thermal stability |
5. Customization Options
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Geometry: Round, rectangular, or user-defined shapes.
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Doping: N-type or P-type with concentrations from 10¹⁵ to 10¹⁹ cm⁻³.
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Thickness: 100–500 μm, with optional backside metallization for improved integration.
6. Conclusion
The 10×10mm 4H-N type SiC substrate combines advanced material properties with flexibility in design, making it a critical enabler for next-generation electronics in automotive, communication, and energy systems. Its compatibility with high-temperature, high-frequency, and high-power applications positions it as a cornerstone of semiconductor innovation.
Tags: #SiC #4H-SiC #PowerElectronics #Semiconductor #Wafer #10x10mm #ThermalManagement
